this is information on a product in full production. may 2012 doc id 022059 rev 2 1/11 11 3STL2540 low voltage high performance pnp power transistor datasheet ? production data features very low collector-emitter saturation voltage high current gain characteristic small, thin, leadless smd plastic package with excellent thermal behavior applications power management dc-dc converters description this device is an pnp transistor manufactured using new low voltage planar technology with double metal process. the result is a transistor which boasts exceptionally high gain performance coupled with very low saturation voltage. figure 1. internal schematic diagram powerflat? 2 x 2 3l 1 2 3 1 2 table 1. device summary order code marking package packaging 3 stl2540 l2540 powerflat? 2 x 2 tape and reel www.st.com
absolute maximum ratings 3STL2540 2/11 doc id 022059 rev 2 1 absolute maximum ratings table 2. absolute maximum ratings symbol parameter value unit v cbo collector-base voltage (i e = 0) -40 v v ceo collector-emitter voltage (i b = 0) -40 v v ebo emitter-base voltage (i c = 0) -6 v i c collector current -5 a i cm collector peak current (t p < 5 ms) -10 a i b base current -0.5 a i bm base peak current (t p < 5 ms) -1 a p tot (1) 1. device mounted on a pcb area of 1 cm2 total dissipation at t a = 25 c 1.2 w t stg storage temperature -65 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thja (1) 1. device mounted on a pcb area of 1 cm2 thermal resistance junction-ambient max 104 c/w r thja (2) 2. device mounted on a pcb area of 6 cm2 thermal resistance junction-ambient max 75 c/w r thjc thermal resistance junction-case max 45 c/w
3STL2540 electrical characteristics doc id 022059 rev 2 3 /11 2 electrical characteristics t j = 25 c; unless otherwise specified. table 4. electrical characteristics symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e = 0) v cb = - 40 v -100 na i ebo emitter cut-off current (i c = 0) v eb = - 6 v -100 na v be(on) base-emitter on voltage v ce = - 2 v i c = - 100 ma -670 mv v ce(sat) (1) 1. pulse test: pulse duration 3 00 s, duty cycle 2 %. collector-emitter saturation voltage i c = - 1 a i b = - 10 ma i c = - 2 a i b = - 100 ma i c = - 5 a _ i b = - 250 ma -150 - 3 00 -200 mv v be(sat) (1) base-emitter saturation voltage i c = - 1 a _ i b = - 10 ma 800 mv h fe (1) dc current gain v ce = - 2 v i c = - 0.5 a v ce = - 2 v i c = - 2 a v ce = - 2 v i c = - 5 a 280 210 100 v ce = -0.2 - 2 v i c = - 1 a t j = - 3 0 c 150 c 100 900 t d t r t s t f resistive load delay time rise time storage time fall time i c = - 2 a v cc = - 10 v v be(off) = 5 v, - i b(on) = i b(off) = 200 ma 25 140 290 60 ns ns ns ns f t transition frequency i c = - 0.1 a __ v ce = - 10 v 1 3 0mhz
electrical characteristics 3STL2540 4/11 doc id 022059 rev 2 2.1 electrical characteristics (curves) figure 2. dc current gain (v ce =-2 v) figure 3. dc current gain (v ce =-5 v) figure 4. collector-emitter saturation voltage (v cesat @ h fe =20) figure 5. collector-emitter saturation voltage (v cesat @ h fe =100) figure 6. base-emitter saturation voltage (v be(sat) @ h fe =20) figure 7. base-emitter saturation voltage (v be(sat) @ h fe =100) ! - v h ) c ! ? # & |